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 DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BFQ251 PNP video transistor
Product specification Supersedes data of 1997 Oct 02 1998 Oct 06
Philips Semiconductors
Product specification
PNP video transistor
FEATURES * High breakdown voltages * Low output capacitance * High gain bandwidth * Good thermal stability * Gold metallization ensures excellent reliability. APPLICATIONS * Buffer/driver in high-resolution colour graphics monitors. DESCRIPTION PNP video transistor in a SOT54 (TO-92) plastic package. NPN complement: BFQ231. PINNING
BFQ251
page
1
2 3
MSB033
PIN 1 2 3 base
DESCRIPTION collector emitter
Fig.1
Simplified outline (SOT54; TO-92).
QUICK REFERENCE DATA SYMBOL VCBO VCER IC Ptot hFE fT Note 1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCER VEBO IC Ptot Tstg Tj Notes 1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body. 2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 65 C; notes 1 and 2; see Fig.3 open emitter open base RBE = 100 open collector CONDITIONS - - - - - - -65 - MIN. MAX. -100 -65 -95 -3 -300 1 +150 150 V V V V mA W C C UNIT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Ts 65 C; note 1 IC = -50 mA; VCE = -10 V open emitter RBE = 100 CONDITIONS - - - - 20 MIN. - - - - 30 1.3 TYP. MAX. -100 -95 -300 1 - - GHz UNIT V V mA W
IC = -50 mA; VCE = -10 V; Tamb = 25 C 1
1998 Oct 06
2
Philips Semiconductors
Product specification
PNP video transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a Note 1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICES ICBO hFE Ccb fT PARAMETER collector-base breakdown voltage CONDITIONS IC = -0.1 mA; IE = 0 MIN. -100 -65 -95 -3 - - 20 - 1 TYP. - - - - - - 30 2 1.3 PARAMETER thermal resistance from junction to soldering point thermal resistance from junction to ambient CONDITIONS note 1
BFQ251
VALUE 85 185
UNIT K/W K/W
MAX. UNIT - - - - -100 -20 - - - pF GHz V V V V A A
collector-emitter breakdown voltage IC = -10 mA; IB = 0 collector-emitter breakdown voltage IC = -10 mA; RBE = 100 emitter-base breakdown voltage collector-emitter cut-off current collector-base cut-off current DC current gain collector-base capacitance transition frequency IE = -0.1 mA; IC = 0 IB = 0; VCE = -50 V IE = 0; VCB = -50 V IC = -50 mA; VCE = -10 V; see Fig.4 IC = ic = 0; VCB = -10 V; f = 1 MHz; see Fig.5 IC = -50; VCE = -10 V; see Fig.6
-400 handbook, halfpage IC (mA) -300
MEA232 - 1
MEA228 - 1
1.2 handbook, halfpage Ptot (W) 1.0
0.8
-200
0.6
0.4 -100 0.2
0
0
-20
-40
-60
-80 -100 VCEO (V)
0
0
50
100
150
Ts (oC)
200
Tamb = 25 C.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1998 Oct 06
3
Philips Semiconductors
Product specification
PNP video transistor
BFQ251
MEA231
MEA229
handbook,40 halfpage
6 handbook, halfpage Ccb (pF)
hFE 30
4
20
2 10
0 0
-100
-200
IC (mA)
-300
0
0
-10
-20
-30 -40 VCB (V)
VCE = -10 V; Tamb = 25 C.
f = 1 MHz; Tamb = 25 C.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Collector-base capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
1.5
MBK897
fr (GHz) 1
0.5
0 0
-50
-100 I (mA) C
-150
VCE = -10 V; Tamb = 25 C.
Fig.6
Transition frequency as a function of collector current; typical values.
1998 Oct 06
4
Philips Semiconductors
Product specification
PNP video transistor
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
BFQ251
SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28
1998 Oct 06
5
Philips Semiconductors
Product specification
PNP video transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BFQ251
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Oct 06
6
Philips Semiconductors
Product specification
PNP video transistor
NOTES
BFQ251
1998 Oct 06
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125102/00/04/pp8
Date of release: 1998 Oct 06
Document order number:
9397 750 04569


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